Abstract
In this paper, a method of indium-tin oxide/Au/indium-tin oxide (IAI) structure as transparent conductive layers (TCLs) to improve the current spreading and suppress efficiency droop of ultraviolet light-emitting diodes (UV-LEDs) is investigated. The morphology and distribution of Au clusters formed by annealing are investigate by atomic force microscope and scanning electron microscope. Compared with the UV-LED without Au clusters, the forward voltage of UV-LED is reduced by 5.9% at 20 mA, light output power and wall plug efficiency increase by 64.2% and 84.2% at 300 mA for the UV-LED with IAI structure as the thickness of the Au interlayer is 1 nm. In addition, light emission distribution results show that by inserting Au interlayer, current distributes more uniform and the current spreading characteristics of UV-LED are improved. Ultimately, efficiency droop of the LED has been suppressed.
Funder
National Natural Science Foundation of China
the State Key Laboratory on Integrated Optoelectronics
The Natural Science Basic Research Program of Shaanxi
National Key Research and Development Program of China
Fundamental Research Funds for the Central Universities
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials