Carrier distribution in (0001)InGaN∕GaN multiple quantum well light-emitting diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2839305
Reference11 articles.
1. Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting
2. Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes
3. Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200A∕cm2
4. Auger recombination in InGaN measured by photoluminescence
5. Impact of planar microcavity effects on light extraction-Part I: basic concepts and analytical trends
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