Improvement of p-type ohmic contact of GaN laser diodes by using delta-doped p-GaN contact layer-Reference-Cited by-同舟云学术

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Improvement of p-type ohmic contact of GaN laser diodes by using delta-doped p-GaN contact layer

Published:2024-09 Issue: Volume:193 Page:207899
ISSN:2773-0123
Container-title:Micro and Nanostructures
language:en
Short-container-title:Micro and Nanostructures

Author:

Lang Rui,Lei Menglai,Li Shukun,Chen Huanqing,Zong Hua,Jiang Shengxiang,Yu Guo,Chen Weihua,Hu Xiaodong^ORCID

Funder

National Key Research and Development Program of China

Publisher

Elsevier BV

Reference16 articles.

1. Very low resistance multilayer Ohmic contact to n‐GaN

2. Low-resistance ohmic contacts to p-type GaN achieved by the oxidation of Ni/Au films

3. The effect of thermal annealing on the Ni/Au contact of p-type GaN

4. Mechanism for Ohmic contact formation of oxidized Ni/Au onp-type GaN

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