Ultra-low-current driven InGaN blue micro light-emitting diodes for electrically efficient and self-heating relaxed microdisplay

Author:

Baek Woo JinORCID,Park Juhyuk,Shim Joonsup,Kim Bong Ho,Park Seongchong,Kim Hyun Soo,Geum Dae-MyeongORCID,Kim Sang HyeonORCID

Abstract

AbstractInGaN-based micro-light-emitting diodes have a strong potential as a crucial building block for next-generation displays. However, small-size pixels suffer from efficiency degradations, which increase the power consumption of the display. We demonstrate strategies for epitaxial structure engineering carefully considering the quantum barrier layer and electron blocking layer to alleviate efficiency degradations in low current injection regime by reducing the lateral diffusion of injected carriers via reducing the tunneling rate of electrons through the barrier layer and balanced carrier injection. As a result, the fabricated micro-light-emitting diodes show a high external quantum efficiency of 3.00% at 0.1 A/cm2 for the pixel size of 10 × 10 μm2 and a negligible Jmax EQE shift during size reduction, which is challenging due to the non-radiative recombination at the sidewall. Furthermore, we verify that our epitaxy strategies can result in the relaxation of self-heating of the micro-light-emitting diodes, where the average pixel temperature was effectively reduced.

Funder

Samsung Research Funding & Incubation Center of Samsung Electronics

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy,General Biochemistry, Genetics and Molecular Biology,General Chemistry,Multidisciplinary

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