Thermal Studies of 3-D Stacked InGaAs HEMTs and Mitigation Strategy of Self-Heating Effect Using Buried Metal Insertion-Reference-Cited by-同舟云学术

Thermal Studies of 3-D Stacked InGaAs HEMTs and Mitigation Strategy of Self-Heating Effect Using Buried Metal Insertion

Published:2024-08 Issue:8 Volume:71 Page:4517-4523
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Jeong Jaeyong¹,Kim Seong Kwang¹,Suh Yoon-Je¹^ORCID,Shim Joonsup¹^ORCID,Beak Woo Jin¹^ORCID,Choi Sung Joon¹,Kim Joon Pyo¹,Kim Bong Ho¹^ORCID,Geum Dae-Myeong²,Kim Jongmin³^ORCID,Kim Sanghyeon¹^ORCID

Affiliation:

1. School of Electrical Engineering, KAIST, Daejeon, South Korea

2. School of Electronics Engineering, Chungbuk National University, Cheongju, Chungcheongbuk-do, South Korea

3. Division of Device Technology, Korea Advanced Nano Fab Center (KANC), Suwon, South Korea

Funder

System Semiconductor Development Program through by Gyeonggi-do

National Research Foundation of Korea

BK21 FOUR

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/16/10609410/10557627.pdf?arnumber=10557627

Reference30 articles.

1. Heterogeneous Integration Toward a Monolithic 3-D Chip Enabled by III–V and Ge Materials

2. Heterogeneous and Monolithic 3D Integration Technology for Mixed-Signal ICs

3. A sub-micron-thick InGaAs broadband (400-1700 nm) photodetectors with a high external quantum efficiency (>70%)

4. Monolithic 3D sequential integration realizing 1600-PPI red micro-LED display on Si CMOS driver IC

5. High-performance InGaAs-On-insulator HEMTs on Si CMOS for substrate coupling noise-free monolithic 3D mixed-signal IC;Jeong

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