Revealing the importance of light extraction efficiency in InGaN/GaN microLEDs via chemical treatment and dielectric passivation-Reference-Cited by-同舟云学术

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Revealing the importance of light extraction efficiency in InGaN/GaN microLEDs via chemical treatment and dielectric passivation

Published:2020-06-22 Issue:25 Volume:116 Page:251104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ley Ryan T.¹,Smith Jordan M.²^ORCID,Wong Matthew S.²,Margalith Tal²,Nakamura Shuji²³,DenBaars Steven P.²³,Gordon Michael J.¹^ORCID

Affiliation:

1. Department of Chemical Engineering, University of California, Santa Barbara, California 93106, USA

2. Materials Department, University of California, Santa Barbara, California 93106, USA

3. Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA

Funder

UCSB Solid State Lighting and Energy Electronics Center

US Army Research Office

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0011651

Reference29 articles.

1. Absorption, Reflectance, and Luminescence of GaN Epitaxial Layers

2. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

3. Micro-LEDs, a Manufacturability Perspective

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