GaN Surface Passivation by MoS<sub>2</sub> Coating-Reference-Cited by-同舟云学术

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GaN Surface Passivation by MoS₂ Coating

Published:2024-08-12 Issue:33 Volume:24 Page:10124-10130
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Chen Danxuan¹^ORCID,Jiang Jin²,Weatherley Thomas F. K.¹^ORCID,Carlin Jean-François¹,Banerjee Mitali²,Grandjean Nicolas¹

Affiliation:

1. Laboratory of Advanced Semiconductors for Photonics and Electronics, Institute of Physics, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland

2. Laboratory of Quantum Physics, Institute of Physics, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland

Funder

Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung

Horizon 2020 Framework Programme

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.4c02259

Reference41 articles.

1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

2. Electric Field Effect in Atomically Thin Carbon Films

3. Bandgap engineering of two-dimensional semiconductor materials

4. Strong Light-Matter Interactions in Heterostructures of Atomically Thin Films

5. Excitonic devices with van der Waals heterostructures: valleytronics meets twistronics

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