The impact of charge compensated and uncompensated strontium defects on the stabilization of the ferroelectric phase in HfO2-Reference-Cited by-同舟云学术

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The impact of charge compensated and uncompensated strontium defects on the stabilization of the ferroelectric phase in HfO2

Published:2017-08-21 Issue:8 Volume:111 Page:082902
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Materlik Robin¹,Künneth Christopher¹^ORCID,Mikolajick Thomas²³^ORCID,Kersch Alfred¹

Affiliation:

1. Department of Applied Sciences and Mechatronics, Munich University of Applied Sciences, Lothstr. 34, 80335 Munich, Germany

2. NaMLab gGmbH, Noethnitzer Strasse 64, 01187 Dresden, Germany

3. Technische Universität Dresden, Noethnitzer Strasse 64, 01187 Dresden, Germany

Funder

Deutsche Forschungsgemeinschaft (DFG)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4993110

Reference43 articles.

1. Ferroelectricity in hafnium oxide thin films

2. Ferroelectricity in Simple Binary ZrO2 and HfO2

3. Effect of forming gas annealing on the ferroelectric properties of Hf0.5Zr0.5O2 thin films with and without Pt electrodes

4. The effects of layering in ferroelectric Si-doped HfO2 thin films

5. The demonstration of significant ferroelectricity in epitaxial Y-doped HfO2 film

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