Effect of forming gas annealing on the ferroelectric properties of Hf0.5Zr0.5O2 thin films with and without Pt electrodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4798265
Reference21 articles.
1. Ferroelectric Memories
2. Why is nonvolatile ferroelectric memory field-effect transistor still elusive?
3. Emerging memories: resistive switching mechanisms and current status
4. Effect of hydrogen on Pb(Zr,Ti)O3-based ferroelectric capacitors
5. H2 damage of ferroelectric Pb(Zr,Ti)O3 thin-film capacitors—The role of catalytic and adsorptive activity of the top electrode
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