Thickness-Dependent Ferroelectricity in Freestanding Hf0.5Zr0.5O2 Membranes-Reference-Cited by-同舟云学术

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Thickness-Dependent Ferroelectricity in Freestanding Hf_0.5Zr_0.5O₂ Membranes

Published:2024-02-23 Issue: Volume: Page:
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Liu Yu-Chen¹,Chen Bo-Cia¹,Wei Chia-Chun¹,Ho Sheng-Zhu¹,Liou Yi-De¹,Kaur Puneet¹^ORCID,Rahul ¹^ORCID,Chen Yi-Chun¹²,Yang Jan-Chi¹²^ORCID

Affiliation:

1. Department of Physics, National Cheng Kung University, Tainan 70101, Taiwan

2. Center for Quantum Frontiers of Research & Technology (QFort), National Cheng Kung University, Tainan 70101, Taiwan

Funder

National Science and Technology Council

Ministry of Education, Taiwan

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c01856

Reference47 articles.

1. Effect of post-deposition annealing temperature on RF-sputtered HfO2 thin film for advanced CMOS technology

2. Ferroelectricity in hafnium oxide: CMOS compatible ferroelectric field effect transistors

3. Carrier mobility in advanced CMOS devices with metal gate and HfO2 gate dielectric

4. Advances, challenges and opportunities in 3D CMOS sequential integration

5. Evaluation of Candidate Metals for Dual-Metal Gate CMOS with HfO2 Gate Dielectric

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On the Thickness Scaling of Ferroelectric Hafnia;IEEE Transactions on Materials for Electron Devices;2024

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