(001)-Oriented Sr:HfO<sub>2</sub> Ferroelectric Films Deposited by a Flexible Chemical Solution Method-Reference-Cited by-同舟云学术

(001)-Oriented Sr:HfO₂ Ferroelectric Films Deposited by a Flexible Chemical Solution Method

Published:2024-03-12 Issue:3 Volume:6 Page:1809-1820
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Badillo Miguel¹²^ORCID,Taleb Sepide¹^ORCID,Carreno Jimenez Brenda¹^ORCID,Mokabber Taraneh¹^ORCID,Castanedo Pérez Rebeca³^ORCID,Torres-Delgado Gerardo³^ORCID,Noheda Beatriz⁴⁵^ORCID,Acuautla Mónica¹^ORCID

Affiliation:

1. Engineering and Technology Institute Groningen (ENTEG), Faculty of Science and Engineering, University of Groningen, Nijenborgh 4, 9747AG Groningen, The Netherlands

2. Department of Physics, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano, Italy

3. Centro de Investigación y de Estudios Avanzados del I.P.N. (CINVESTAV), Unidad Querétaro, 76230 Querétaro, Mexico

4. Zernike Institute for Advanced Materials (ZIAM), Faculty of Science and Engineering, University of Groningen, Nijenborgh 4, 9747AG Groningen, The Netherlands

5. CogniGron (Groningen Cognitive Systems and Materials Center), University of Groningen, Nijenborgh 4, NL-9747 AG Groningen, Netherlands

Funder

Rijksuniversiteit Groningen

Ubbo Emmius Foundation

Consejo Nacional de Humanidades, Ciencias y Tecnolog?as

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c01725

Reference50 articles.

1. Semiconductor industry switches to hafnium-based transistors

2. Phase Relations and EOS of ZrO 2 and HfO 2 Under High-temperature and High-pressure

3. Ferroelectricity in hafnium oxide thin films

4. Prediction of new metastable $$\hbox {HfO}_{2}$$ HfO 2 phases: toward understanding ferro- and antiferroelectric films

5. A rhombohedral ferroelectric phase in epitaxially strained Hf0.5Zr0.5O2 thin films

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