Systematic structural and chemical characterization of the transition layer at the interface of NO-annealed 4H-SiC/SiO2 metal-oxide-semiconductor field-effect transistors-Reference-Cited by-同舟云学术

Systematic structural and chemical characterization of the transition layer at the interface of NO-annealed 4H-SiC/SiO2 metal-oxide-semiconductor field-effect transistors

Published:2013-01-28 Issue:4 Volume:113 Page:044517
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Taillon Joshua A.,Hyuk Yang Joon,Ahyi Claude A.,Rozen John,Williams John R.,Feldman Leonard C.,Zheleva Tsvetanka S.,Lelis Aivars J.,Salamanca-Riba Lourdes G.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4789924

Reference27 articles.

1. Comparison of 6H-SiC, 3C-SiC, and Si for power devices

2. Significantly improved performance of MOSFETs on silicon carbide using the 15R-SiC polytype

3. Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide

4. Nanoscale characterization of the silicon dioxide-silicon carbide interface using elemental mapping by energy-filtered transmission electron microscopy

5. Excess carbon in silicon carbide

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