Analytical electron microscopy of ( 2 ¯ 01) β-Ga2O3/SiO2 and ( 2 ¯ 01) β-Ga2O3/Al2O3 interface structures in MOS capacitors-Reference-Cited by-同舟云学术

Analytical electron microscopy of ( 2 ¯ 01) β-Ga2O3/SiO2 and ( 2 ¯ 01) β-Ga2O3/Al2O3 interface structures in MOS capacitors

Published:2021-05-21 Issue:19 Volume:129 Page:195705
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Klingshirn Christopher J.¹^ORCID,Jayawardena Asanka²,Dhar Sarit²^ORCID,Ramamurthy Rahul P.³^ORCID,Morisette Dallas³^ORCID,Zheleva Tsvetanka⁴,Lelis Aivars⁴,Salamanca-Riba Lourdes G.¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20742, USA

2. Department of Physics, Auburn University, Auburn, Alabama 36849, USA

3. School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USA

4. U. S. Army Research Laboratory, Adelphi, Maryland 20783, USA

Funder

U.S. Army Research Laboratory

II-VI Foundation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/am-pdf/10.1063/5.0041266

Reference39 articles.

1. Optical Absorption and Photoconductivity in the Band Edge ofβ−Ga2O3

2. Deep-ultraviolet transparent conductive β-Ga2O3 thin films

3. Correlation between blue luminescence intensity and resistivity in β-Ga2O3 single crystals

4. Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

5. Recent progress in Ga2O3power devices

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