Investigation of Alumina Atomic-Scale Structure and Crystallization Behavior Across a β-Ga2O3/Al2O3 Interface
Author:
Affiliation:
1. Department of Materials Science and Engineering, The Pennsylvania State University, State College , PA , USA
2. Materials Department, University of California Santa Barbara , Santa Barbara, CA , USA
Publisher
Oxford University Press (OUP)
Link
https://academic.oup.com/mam/article-pdf/30/Supplement_1/ozae044.078/58672511/ozae044.078.pdf
Reference13 articles.
1. Postdeposition annealing effect on atomic-layer-deposited Al2O3 gate insulator on (001) β-Ga2O3
2. Analytical electron microscopy of ( 2 ¯ 01) β-Ga2O3/SiO2 and ( 2 ¯ 01) β-Ga2O3/Al2O3 interface structures in MOS capacitors
3. Epitaxial growth and electric properties of γ-Al2O3(110) films on β-Ga2O3(010) substrates
4. A review of Ga2O3materials, processing, and devices
5. Properties of SiO2 and Al2O3 films for electrical insulation applications deposited by reactive pulse magnetron sputtering
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