Postdeposition annealing effect on atomic-layer-deposited Al2O3 gate insulator on (001) β-Ga2O3-Reference-Cited by-同舟云学术

Postdeposition annealing effect on atomic-layer-deposited Al2O3 gate insulator on (001) β-Ga2O3

Published:2021-12 Issue:6 Volume:39 Page:062205
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B
language:en
Short-container-title:Journal of Vacuum Science & Technology B

Author:

Hiraiwa Atsushi¹²^ORCID,Horikawa Kiyotaka³^ORCID,Kawarada Hiroshi¹²³^ORCID,Kado Motohisa⁴,Danno Katsunori⁴

Affiliation:

1. Research Organization for Nano and Life Innovation, Waseda University, 513 Waseda-tsurumaki, Shinjuku, Tokyo 162-0041, Japan

2. The Kagami Memorial Laboratory for Materials Science and Technology, Waseda University, 2-8-26 Nishiwaseda, Shinjuku, Tokyo 169-0051, Japan

3. Faculty of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555, Japan

4. Advanced Material Engineering Division, Toyota Motor Corporation, 1200 Mishuku, Susono, Shizuoka 410-1193, Japan

Funder

Ministry of Education, Culture, Sports, Science and Technology

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

https://avs.scitation.org/doi/pdf/10.1116/6.0001360

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