Influence of molecular hydrogen on Ge island nucleation on Si(001)
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1317245
Reference26 articles.
1. Growth and characterization of self-assembled Ge-rich islands on Si
2. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
3. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)
4. Shape Transition of Germanium Nanocrystals on a Silicon (001) Surface from Pyramids to Domes
5. Ge growth on Si using atomic hydrogen as a surfactant
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1. Ultrathin films of Ge on the Si(100)2 × 1 surface;Surface and Interface Analysis;2017-11-28
2. Advances in self-assembled SiGe islands and nanostructures;physica status solidi (c);2009-04-08
3. Ge dots and nanostructures grown epitaxially on Si;Journal of Physics: Condensed Matter;2006-02-10
4. Advances in the growth and characterization of Ge quantum dots and islands;Journal of Materials Research;2005-12-01
5. Growth of Ge quantum dot mediated by boron on Ge wetting layer;Journal of Crystal Growth;2005-06
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