Ge dots and nanostructures grown epitaxially on Si
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/18/i=8/a=R01/pdf
Reference230 articles.
1. Initial stage of heteroepitaxy of Ge on Si(111)-7 × 7 and (100)-2 × 1 surfaces studied by low-energy electron-loss spectroscopy (LEELS)
2. Heteroepitaxy of Ge films on Si(100) surface
3. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
4. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)
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