Heteroepitaxy of Ge films on Si(100) surface
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference11 articles.
1. Microscopic investigation of the band discontinuities at the silicon-germanium heterojunction interface
2. AlGaAs double‐heterostructure diode lasers fabricated on a monolithic GaAs/Si substrate
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4. Stability and surface properties of GeSi alloy films on Si(111) substrate
5. Measurement of the band gap of GexSi1−x/Si strained‐layer heterostructures
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Ge dots and nanostructures grown epitaxially on Si;Journal of Physics: Condensed Matter;2006-02-10
2. Transmission ion channeling facility for structural studies of monolayer films on clean semiconductor surfaces;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1993-05
3. Surface morphology of epitaxial Ge on Si grown by plasma enhanced chemical vapor deposition;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1991-07
4. A review of theoretical and experimental work on the structure of GexSi1-xstrained layers and superlattices, with extensive bibliography;Advances in Physics;1990-04
5. Adsorbed layer and thin film growth modes monitored by Auger electron spectroscopy;Surface Science Reports;1989-11
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