Microscopic investigation of the band discontinuities at the silicon-germanium heterojunction interface
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference22 articles.
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1. Interface states at semiconductor junctions;Reports on Progress in Physics;1999-01-01
2. The photoelectric yield technique for the characterization of the semiconductor heterostructures;Il Nuovo Cimento D;1998-07
3. Investigation of Ge on Si(100) quantum wells by photoelectron spectroscopies;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-05
4. Measurements of the energy band offsets of and heterojunctions;Applied Surface Science;1996-09
5. Low-energy yield spectroscopy determination of band offsets: application to the epitaxial heterostructure;Applied Surface Science;1996-09
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