Surface morphology of epitaxial Ge on Si grown by plasma enhanced chemical vapor deposition
-
Published:1991-07
Issue:4
Volume:9
Page:2022
-
ISSN:0734-211X
-
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
-
language:
-
Short-container-title:J. Vac. Sci. Technol. B
Publisher
American Vacuum Society
Subject
General Engineering
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Growth and characterization of nanoscale 3C–SiC islands on Si substrates;Journal of Applied Physics;1999-04
2. Channeled ion assisted epitaxial growth of Ge on thin Si substrates;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-09
3. Reaction kinetics of GeCl4 on Si(111)7 × 7;Surface Science;1992-11