Measurement of the band gap of GexSi1−x/Si strained‐layer heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96271
Reference15 articles.
1. Intrinsic Optical Absorption in Germanium-Silicon Alloys
2. Modulation doping in GexSi1−x/Si strained layer heterostructures
3. GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy
4. Defects in epitaxial multilayers
5. Defects in epitaxial multilayers
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