Ge growth on Si using atomic hydrogen as a surfactant
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.110919
Reference20 articles.
1. Surfactants in epitaxial growth
2. Defect self-annihilation in surfactant-mediated epitaxial growth
3. The influence of Sb as a surfactant on the strain relaxation of Ge/Si(001)
4. Two‐dimensional lattice‐mismatched heteroepitaxy of germanium on silicon beyond the critical thickness by introducing a surfactant
5. The growth of Ge on a Te/Si(001) surface: surface catalytic epitaxy
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