Surfactants in epitaxial growth
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.63.632/fulltext
Reference13 articles.
1. Reflection High-Energy Electron Diffraction Intensity Oscillations during GexSi1-xMBE Growth on Si(001) Substrates
2. Heteroepitaxial growth of Ge films on the Si(100)‐2×1 surface
3. Pseudomorphic Structure at the Interface of Ge on Si(111) Studied by High-Energy-Ion Scattering
4. Thin epitaxial Ge−Si(111) films: Study and control of morphology
5. Growth temperature dependence of interfacial abruptness in Si/Ge heteroepitaxy studied by Raman spectroscopy and medium energy ion scattering
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