Highly oriented crystalline si on epitaxial Gd2O3/Si(111) substrate using low-cost Radio Frequency sputtering for Silicon on Insulator application-Reference-Cited by-同舟云学术

Highly oriented crystalline si on epitaxial Gd2O3/Si(111) substrate using low-cost Radio Frequency sputtering for Silicon on Insulator application

Published:2024-03 Issue: Volume:793 Page:140272
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Patil Shubham^ORCID,Kumar Sandeep^ORCID,Pandey Adityanarayan H,Bhunia Swagata^ORCID,Kamaliya Bhaveshkumar^ORCID,Sharma Anand^ORCID,Lashkare Sandip,Mote Rakesh G.^ORCID,Laha Apurba,Deshpande Veeresh^ORCID,Ganguly Udayan^ORCID

Funder

Indian Institute of Technology Bombay

Ministry of Electronics and Information Technology

Department of Science and Technology, Ministry of Science and Technology, India

Joint Research Center for Science and Technology, Ryukoku University

Publisher

Elsevier BV

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Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Engineering Wafer Scale Single-Crystalline Si Growth on Epitaxial Gd2O3/Si(111) Substrate using Radio Frequency Sputtering for Silicon on Insulator Application;Thin Solid Films;2024-09

2. Engineering Wafer Scale Single-Crystalline Si Growth on Epitaxial Gd2o3/Si(111) Substrate Using Rf Sputtering for Soi Application;2024