Engineering Wafer Scale Single-Crystalline Si Growth on Epitaxial Gd2O3/Si(111) Substrate using Radio Frequency Sputtering for Silicon on Insulator Application-Reference-Cited by-同舟云学术

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Engineering Wafer Scale Single-Crystalline Si Growth on Epitaxial Gd2O3/Si(111) Substrate using Radio Frequency Sputtering for Silicon on Insulator Application

Published:2024-09 Issue: Volume: Page:140529
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Patil Shubham,Pandey Adityanarayan H,Bhunia Swagata,Lashkare Sandip,Laha Apurba,Deshpande Veeresh,Ganguly Udayan

Funder

Ministry of Electronics and Information Technology

India Ministry of Science & Technology Department of Science and Technology

Publisher

Elsevier BV

Reference36 articles.

1. Effects of Scaling on Analog FoMs of UTBB FD-SOI MOS Transistors: A Detailed Analysis;Bhoir;IEEE Trans Electron Devices,2020

2. Monolithic integration of rare-earth oxides and semiconductors for on-silicon technology;Dargis;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films,2014

3. Epitaxial Gd2O3on Si (111) Substrate by Sputtering to Enable Low Cost SOI;Amlta,2018

4. Growth temperature dependence of epitaxial Gd2O3 films on Si(1 1 1);Niu;Microelectron Eng,2009

5. Radio frequency power controlled Gd2O3 crystal phase transition from monoclinic to cubic;Rawat;Thin Solid Films,2022

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