Growth temperature dependence of epitaxial Gd2O3 films on Si(111)-Reference-Cited by-同舟云学术

Growth temperature dependence of epitaxial Gd2O3 films on Si(111)

Published:2009-07 Issue:7-9 Volume:86 Page:1700-1702
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Niu G.,Vilquin B.,Baboux N.,Plossu C.,Becerra L.,Saint-Grions G.,Hollinger G.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. High-κ gate dielectrics: Current status and materials properties considerations

2. Structural properties of epitaxial SrTiO3 thin films grown by molecular beam epitaxy on Si(001)

3. Two-dimensional growth of high-quality strontium titanate thin films on Si

4. Crystalline ternary rare earth oxide with capacitance equivalent thickness below 1nm for high-K application

5. Application of HfSiON as a gate dielectric material

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