Growth‐Related Formation Mechanism of I3‐Type Basal Stacking Fault in Epitaxially Grown Hexagonal Ge‐2H-Reference-Cited by-同舟云学术

Growth‐Related Formation Mechanism of I3‐Type Basal Stacking Fault in Epitaxially Grown Hexagonal Ge‐2H

Published:2022-05-04 Issue:16 Volume:9 Page:2102340
ISSN:2196-7350
Container-title:Advanced Materials Interfaces
language:en
Short-container-title:Adv Materials Inter

Author:

Vincent Laetitia¹^ORCID,Fadaly Elham M. T.²^ORCID,Renard Charles¹^ORCID,Peeters Wouter H. J.²^ORCID,Vettori Marco²^ORCID,Panciera Federico¹^ORCID,Bouchier Daniel¹,Bakkers Erik P. A. M²^ORCID,Verheijen Marcel A.²^ORCID

Affiliation:

1. CNRS Centre de Nanosciences et de Nanotechnologies Université Paris‐Saclay Palaiseau 91120 France

2. Department of Applied Physics Eindhoven University of Technology Groene Loper 19 Eindhoven 5612AP The Netherlands

Funder

Agence Nationale de la Recherche

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/admi.202102340

Reference49 articles.

1. Crystal Phase Quantum Dots

2. Electron-hole interactions in coupled InAs-GaSb quantum dots based on nanowire crystal phase templates

3. Crystal Phase Quantum Well Emission with Digital Control

4. Theory of static structural properties, crystal stability, and phase transformations: Application to Si and Ge

5. First-principles study of the structural properties of Ge

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Carrier cooling in direct bandgap hexagonal silicon-germanium nanowires;Applied Physics Letters;2024-09-09

2. Direct bandgap quantum wells in hexagonal Silicon Germanium;Nature Communications;2024-06-19

3. 2H–Si/Ge for Group-IV Photonics: on the Origin of Extended Defects in Core–Shell Nanowires;ACS Applied Nano Materials;2024-04-15