2H–Si/Ge for Group-IV Photonics: on the Origin of Extended Defects in Core–Shell Nanowires-Reference-Cited by-同舟云学术

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2H–Si/Ge for Group-IV Photonics: on the Origin of Extended Defects in Core–Shell Nanowires

Published:2024-04-15 Issue:8 Volume:7 Page:9396-9402
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Rovaris Fabrizio¹^ORCID,Peeters Wouter H. J.²,Marzegalli Anna¹^ORCID,Glas Frank³^ORCID,Vincent Laetitia³,Miglio Leo¹^ORCID,Bakkers Erik P. A. M.²,Verheijen Marcel A.²^ORCID,Scalise Emilio¹^ORCID

Affiliation:

1. Department of Materials Science, University of Milano-Bicocca, 20125 Milano, Italy

2. Eindhoven University of Technology, 5600 Eindhoven, The Netherlands

3. Centre for Nanoscience and Nanotechnology, Université Paris-Saclay, CNRS, 91120 Palaiseau, France

Funder

H2020 Future and Emerging Technologies

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.4c00835

Reference26 articles.

1. Direct-bandgap emission from hexagonal Ge and SiGe alloys

2. Light Emission from Silicon

3. Materials challenges and opportunities for quantum computing hardware

4. 2023 roadmap for materials for quantum technologies

5. Impact of Stacking Faults and Domain Boundaries on the Electronic Transport in Cubic Silicon Carbide Probed by Conductive Atomic Force Microscopy

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