Defect self-annihilation in surfactant-mediated epitaxial growth
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.67.1130/fulltext
Reference13 articles.
1. Thin epitaxial Ge−Si(111) films: Study and control of morphology
2. Surfactants in epitaxial growth
3. Influence of surfactants in Ge and Si epitaxy on Si(001)
4. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
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