Growth of Ge quantum dot mediated by boron on Ge wetting layer
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference20 articles.
1. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
2. Self-assembling Ge(Si)/Si(100) quantum dots
3. Electron and hole energy levels in InAs self‐assembled quantum dots
4. Shape evolution of Ge/Si(001) islands induced by strain-driven alloying
5. Photoluminescence and band edge alignment of C-induced Ge islands and related SiGeC structures
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1. Effect of doping on the photoluminescence of multilayer Ge quantum dots deposited on Si(001) substrate;Acta Physica Sinica;2013
2. Growth and self-organization of SiGe nanostructures;Physics Reports;2013-01
3. Electro-optofluidics: achieving dynamic control on-chip;Optics Express;2012-09-14
4. Advances in self-assembled SiGe islands and nanostructures;physica status solidi (c);2009-04-08
5. Growth, Quantum Confinement and Transport Mechanisms of Ge Nanodot Arrays Formed on a SiO2 Monolayer;e-Journal of Surface Science and Nanotechnology;2008
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