Photoluminescence and band edge alignment of C-induced Ge islands and related SiGeC structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122592
Reference9 articles.
1. Growth and characterization of self-assembled Ge-rich islands on Si
2. Formation of carbon-induced germanium dots
3. Influence of pre-grown carbon on the formation of germanium dots
4. Growth and strain compensation effects in the ternary Si1−x−yGexCyalloy system
5. Photoluminescence of Tensile Strained, Exactly Strain Compensated, and Compressively StrainedSi1−x−yGexCyLayers on Si
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1. Strain-compensated Ge/Si1−C quantum dots with Si mediating layers grown by molecular beam epitaxy;Journal of Crystal Growth;2015-09
2. Formation of Ge Nanodots Capped with SiC Layer by Gas-Source MBE Using MMGe and MMSi;ECS Transactions;2013-03-15
3. Growth and self-organization of SiGe nanostructures;Physics Reports;2013-01
4. Fabrication of a SiC/Ge-Nanodots Stacked Structure Using Organometallic Compounds;Hyomen Kagaku;2012
5. Cross-plane thermal conductivity reduction of vertically uncorrelated Ge∕Si quantum dot superlattices;Applied Physics Letters;2008-07-07
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