Growth and characterization of self-assembled Ge-rich islands on Si-Reference-Cited by-同舟云学术

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Growth and characterization of self-assembled Ge-rich islands on Si

Published:1996-11-01 Issue:11S Volume:11 Page:1521-1528
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Abstreiter G,Schittenhelm P,Engel C,Silveira E,Zrenner A,Meertens D,Jäger W

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 202 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Evolution of Ge wetting layers growing on smooth and rough Si (0 0 1) surfaces: Isolated {1 0 5} facets as a kinetic factor of stress relaxation;Applied Surface Science;2023-01

2. Evolution of Ge Wetting Layers Growing on Smooth and Rough Si (001) Surfaces: Isolated {105} Facets as a Kinetic Factor of Stress Relaxation;SSRN Electronic Journal;2022

3. Photoluminescence enhancement by deterministically site-controlled, vertically stacked SiGe quantum dots;Scientific Reports;2021-10-18

4. Structural and photoluminescence study of TiO2 layer with self-assembled Si1−xGex nanoislands;Journal of Applied Physics;2020-08-28

5. Real-time tracking of the self-assembled growth of a 3D Ge quantum dot lattice in an alumina matrix;Journal of Applied Crystallography;2020-07-24

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