Bandgap engineering in III-nitrides with boron and group V elements: Toward applications in ultraviolet emitters-Reference-Cited by-同舟云学术

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Bandgap engineering in III-nitrides with boron and group V elements: Toward applications in ultraviolet emitters

Published:2020-12 Issue:4 Volume:7 Page:041314
ISSN:1931-9401
Container-title:Applied Physics Reviews
language:en
Short-container-title:Applied Physics Reviews

Author:

Kudrawiec Robert¹²^ORCID,Hommel Detlef¹³^ORCID

Affiliation:

1. LUKASIEWICZ Research Network, PORT Polish Center for Technology Development, Stablowicka 147, 54-066 Wroclaw, Poland

2. Department of Semiconductor Materials Engineering, Wroclaw University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wroclaw, Poland

3. Institute of Experimental Physics, University of Wroclaw, Pl. Maxa Borna 9, 50-204 Wroclaw, Poland

Funder

Foundation for Polish Science

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0025371

Reference241 articles.

1. Nobel Lecture: Fascinated journeys into blue light

2. Nobel Lecture: Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p -type GaN by Mg doping followed by low-energy electron beam irradiation

3. Nobel Lecture: Background story of the invention of efficient blue InGaN light emitting diodes

4. III-nitride semiconductors for intersubband optoelectronics: a review

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3. Epitaxial AlBN/β‐Nb₂N Ferroelectric/Superconductor Heterostructures;physica status solidi (RRL) – Rapid Research Letters;2024-07-25

4. Impact of Boron Atom Clustering on the Electronic Structure of (B,In)N Alloys;physica status solidi (b);2024-07-11

5. Ammonothermal Crystal Growth of Functional Nitrides for Semiconductor Devices: Status and Potential;Materials;2024-06-25

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