Ferroelectric AlBN films by molecular beam epitaxy-Reference-Cited by-同舟云学术

Ferroelectric AlBN films by molecular beam epitaxy

Published:2024-08-12 Issue:7 Volume:125 Page:
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:

Author:

Savant Chandrashekhar¹^ORCID,Gund Ved²^ORCID,Nomoto Kazuki²^ORCID,Maeda Takuya³^ORCID,Jadhav Shubham²^ORCID,Lee Joongwon²^ORCID,Ramesh Madhav²^ORCID,Kim Eungkyun²^ORCID,Nguyen Thai-Son¹^ORCID,Chen Yu-Hsin¹^ORCID,Casamento Joseph¹^ORCID,Rana Farhan²,Lal Amit²,Xing Huili Grace¹²³^ORCID,Jena Debdeep¹²³⁴^ORCID

Affiliation:

1. Department of Materials Science and Engineering, Cornell University 1 , Ithaca, New York 14853, USA

2. School of Electrical and Computer Engineering, Cornell University 2 , Ithaca, New York 14853, USA

3. Kavli Institute at Cornell for Nanoscale Science, Cornell University 3 , Ithaca, New York 14853, USA

4. School of Applied and Engineering Physics, Cornell University 4 , Ithaca, New York 14853, USA

Abstract

We report the properties of molecular beam epitaxy deposited AlBN thin films on a recently developed epitaxial nitride metal electrode, Nb2N. While a control AlN thin film exhibits standard capacitive behavior, distinct ferroelectric switching is observed in the AlBN films with increasing Boron mole fraction. The measured remnant polarization Pr∼15μC/cm2 and coercive field Ec∼ 1.45 MV/cm in these films are smaller than those recently reported on films deposited by sputtering, due to incomplete wake-up, limited by current leakage. Because AlBN preserves the ultrawide energy bandgap of AlN compared to other nitride hi-K dielectrics and ferroelectrics, and it can be epitaxially integrated with GaN and AlN semiconductors, its development will enable several opportunities for unique electronic, photonic, and memory devices.

Funder

Energy Frontier Research Centers

National Science Foundation

Cornell Center for Materials Research

Army Research Office

Publisher

AIP Publishing

Link

https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/5.0181217/20108291/072902_1_5.0181217.pdf

Reference58 articles.

1. The new nitrides: Layered, ferroelectric, magnetic, metallic and superconducting nitrides to boost the GaN photonics and electronics eco-system;Jpn. J. Appl. Phys., Part 1,2019

2. A review of the recent applications of aluminum nitride-based piezoelectric devices;IEEE Access,2023

3. Progress and prospects for GaN and the III-V nitride semiconductors;Thin Solid Films,1993

4. Spontaneous polarization and piezoelectric constants of III-V nitrides;Phys. Rev. B,1997

5. Piezoelectric thin films for sensors, actuators, and energy harvesting;MRS Bull.,2009

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Epitaxial AlBN/β‐Nb₂N Ferroelectric/Superconductor Heterostructures;physica status solidi (RRL) – Rapid Research Letters;2024-07-25