Nobel Lecture: Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p -type GaN by Mg doping followed by low-energy electron beam irradiation-Reference-Cited by-同舟云学术

Nobel Lecture: Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p -type GaN by Mg doping followed by low-energy electron beam irradiation

Published:2015-10-05 Issue:4 Volume:87 Page:1133-1138
ISSN:0034-6861
Container-title:Reviews of Modern Physics
language:en
Short-container-title:Rev. Mod. Phys.

Author:

Amano Hiroshi

Funder

Japan Science and Technology Agency

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/RevModPhys.87.1133/fulltext

Reference49 articles.

1. Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN p-n junction LED

2. Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE

3. Growth of GaN and AlGaN for UV/blue p-n junction diodes

4. Infrared lattice vibration of vapour-grown AlN

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