Mechanism for Ohmic contact formation of Ti onn-type GaN investigated using synchrotron radiation photoemission spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1476085
Reference7 articles.
1. Reliable Ti/Al and Ti/Al/Ni/Au ohmic contacts to n-type GaN formed by vacuum annealing
2. Low-resistance Ti/Al/Ti/Au multilayer ohmic contact to n-GaN
3. Ti/Al/Pt/Au and Al ohmic contacts on Si-substrated GaN
4. Microstructural evidence on electrical properties of Ta/Ti/Al and Ti/Ta/Al ohmic contacts to n-AlGaN/GaN
5. Current conduction mechanism of Si/Ti-based Ohmic contacts to n-GaN
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