Current conduction mechanism of Si/Ti-based Ohmic contacts to n-GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Reference18 articles.
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4. Metal contacts to gallium nitride
5. GaN FETs for microwave and high-temperature applications
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1. Low-temperature formation of Mg/n-type 4H-SiC ohmic contacts with atomically flat interface by lowering of Schottky barrier height;Applied Physics Express;2021-12-17
2. Multilayer Pt/Al based ohmic contacts for AlGaN/GaN heterostructures stable up to 600°C ambient air;Solid-State Electronics;2016-02
3. Interfacial AlN formation of Si/Ti/Al/Cu Ohmic contact for AlGaN/GaN high-electron-mobility transistors;Microelectronic Engineering;2016-02
4. Enhanced TiC/SiC Ohmic contacts by ECR hydrogen plasma pretreatment and low-temperature post-annealing;Applied Surface Science;2015-11
5. Microstructural characterization of Au-free Si/Ti/Al/Cu ohmic contacts in an AlGaN/GaN heterostructure;Thin Solid Films;2015-09
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