Author:
Goyal Nitin,Dusari Srujana,Bardong Jochen,Medjdoub Farid,Kenda Andreas,Binder Alfred
Funder
Austrian Federal Ministry of Economy, Family and Youth
Bundesministerium für Verkehr, Innovation und Technologie
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference37 articles.
1. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
2. Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
3. Temperature-dependent hall measurement of AlGaN/GaN heterostructures on Si substrates
4. Würfl J, Hilsenbeck J, Nebauer E, Tränkle G, Obloh H. In: Proc GaAs Applications Symp (GAAS); 1999. p. 430–4.
5. Medjdoub F, Derluyn J, Cheng K, Degroote S, Germain M, Borghs G. In: International workshop on nitride semiconductors, Montreux, Switzerland, October 2008.
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献