Study on the measurement accuracy of circular transmission line model for low-resistance Ohmic contacts on III-V wide band-gap semiconductors-Reference-Cited by-同舟云学术

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Study on the measurement accuracy of circular transmission line model for low-resistance Ohmic contacts on III-V wide band-gap semiconductors

Published:2018-07 Issue:7 Volume:18 Page:853-858
ISSN:1567-1739
Container-title:Current Applied Physics
language:en
Short-container-title:Current Applied Physics

Author:

Liu Tong^ORCID,Huang Rong,Li Fangsen,Huang Zengli,Zhang Jian,Liu Jianping,Zhang Liqun,Zhang Shuming,Dingsun An,Yang Hui

Funder

National Natural Science Foundation of China

Natural Science Foundation of Jiangsu Province

Youth Innovation Promotion Association of Chinese Academy of Sciences

National Key R&D Program of China

Strategic Priority Research Program of the Chinese Academy of Science

Publisher

Elsevier BV

Subject

General Physics and Astronomy,General Materials Science

Reference19 articles.

1. Effects of surface treatments and metal work functions on electrical properties atp-GaN/metal interfaces

2. Low temperature p-type doping of (Al)GaN layers using ammonia molecular beam epitaxy for InGaN laser diodes

3. Reduction of ohmic contact resistivity on p-type GaN by surface treatment

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1. Investigation on preparation and properties of carbon fiber graphite tailings conductive asphalt mixture: A new approach of graphite tailings application;Construction and Building Materials;2023-10

2. Interface analysis of TiN/n-GaN Ohmic contacts with high thermal stability;Applied Surface Science;2019-07

3. Investigation of Electrical and Interfacial Properties of Improved Ohmic Contact on p-Type GaN;ECS Journal of Solid State Science and Technology;2019

4. Mechanical and Electrical Characteristics of Graphite Tailing Concrete;Advances in Materials Science and Engineering;2018-08-14

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