Interface analysis of TiN/n-GaN Ohmic contacts with high thermal stability-Reference-Cited by-同舟云学术

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Interface analysis of TiN/n-GaN Ohmic contacts with high thermal stability

Published:2019-07 Issue: Volume:481 Page:1148-1153
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Zhu Yafeng,Huang Rong,Li Zhengcheng,Hao Hui,An Yuxin,Liu Tong^ORCID,Zhao Yanfei,Shen Yang,Guo Yun,Li Fangsen^ORCID,Ding Sunan

Funder

National Natural Science Foundation of China

Natural Science Foundation of Jiangsu Province

National Key R&D Program of China

Chinese Academy of Sciences

Youth Innovation Promotion Association of the Chinese Academy of Sciences

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference31 articles.

1. Ohmic contacts to gallium nitride materials;Greco;Appl. Surf. Sci.,2016

2. Prospects for LED lighting;Pimputkar;Nat. Photonics,2009

3. SiC and GaN transistors is there one winner for microwave power applications?;Trew;Proc. IEEE,2002

4. Synchrotron radiation X-ray photoelectron spectroscopy of Ti/Al ohmic contacts to n-type GaN: key role of Al capping layers in interface scavenging reactions;Nozaki;Appl. Phys. Express,2016

5. Titanium and titanium nitride contacts to n-type gallium nitride;Luthery;Semicond. Sci. Technol.,1998

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3. Evolution of surface microstructure of Re‐Al‐Ni‐Au based ohmic contacts on n‐type GaN;Applied Research;2024-01-21

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