Synchrotron radiation X-ray photoelectron spectroscopy of Ti/Al ohmic contacts to n-type GaN: Key role of Al capping layers in interface scavenging reactions-Reference-Cited by-同舟云学术

Synchrotron radiation X-ray photoelectron spectroscopy of Ti/Al ohmic contacts to n-type GaN: Key role of Al capping layers in interface scavenging reactions

Published:2016-09-26 Issue:10 Volume:9 Page:105801
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Nozaki Mikito,Ito Joyo,Asahara Ryohei,Nakazawa Satoshi,Ishida Masahiro,Ueda Tetsuzo,Yoshigoe Akitaka,Hosoi Takuji,Shimura Takayoshi,Watanabe Heiji

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/9/i=10/a=105801/pdf

Reference24 articles.

1. Low resistance ohmic contacts on wide band‐gap GaN

2. Nonalloyed Ti/Al Ohmic contacts to n‐type GaN using high‐temperature premetallization anneal

3. Improvement of Ohmic contacts to n-type GaN using a Ti/Al multi-layered contact scheme

4. Very low resistance multilayer Ohmic contact to n‐GaN

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