Low resistance ohmic contacts on wide band‐gap GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111961
Reference11 articles.
1. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
2. High-Power GaN P-N Junction Blue-Light-Emitting Diodes
3. Metal semiconductor field effect transistor based on single crystal GaN
4. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction
5. Recent developments in ohmic contacts for III–V compound semiconductors
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