Reduction of ohmic contact resistivity on p-type GaN by surface treatment
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy,General Materials Science
Reference10 articles.
1. GaN: Processing, defects, and devices
2. Blue InGaN-based laser diodes with an emission wavelength of 450 nm
3. Room-temperature Ohmic contact on n-type GaN with surface treatment using Cl2 inductively coupled plasma
4. Effect of alcohol-based sulfur treatment on Pt Ohmic contacts top-type GaN
5. Ohmic contact formation mechanism of nonalloyed Pd contacts to p-type GaN observed by positron annihilation spectroscopy
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2. Surface passivation of light emitting diodes: From nano-size to conventional mesa-etched devices;Surfaces and Interfaces;2020-12
3. Study on the measurement accuracy of circular transmission line model for low-resistance Ohmic contacts on III-V wide band-gap semiconductors;Current Applied Physics;2018-07
4. Effect of SAB process on GaN surfaces for low temperature bonding;Polytronic 2007 - 6th International Conference on Polymers and Adhesives in Microelectronics and Photonics;2007-01
5. Thermal stability of Ni/Ag contacts on p‐type GaN;physica status solidi (c);2004-09
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