Ohmic contact formation mechanism of nonalloyed Pd contacts to p-type GaN observed by positron annihilation spectroscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123827
Reference7 articles.
1. Schottky barriers and contact resistances onp‐type GaN
2. Comparison of Ni/Au, Pd/Au, and Cr/Au Metallizations for Ohmic Contacts to p-GaN
3. Evidence for the passivation effect in (NH4)2Sx‐treated GaAs observed by slow positrons
4. The advanced unified defect model for Schottky barrier formation
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