Evidence for the passivation effect in (NH4)2Sx‐treated GaAs observed by slow positrons
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104353
Reference18 articles.
1. New and unified model for Schottky barrier and III–V insulator interface states formation
2. Identification of AsGaantisites in plastically deformed GaAs
3. The advanced unified defect model for Schottky barrier formation
4. Electronic passivation of GaAs surfaces through the formation of arsenic—sulfur bonds
5. Vacuum ultraviolet photoelectron spectroscopy of (NH4)2S‐treated GaAs (100) surfaces
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