Vacuum ultraviolet photoelectron spectroscopy of (NH4)2S‐treated GaAs (100) surfaces
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101780
Reference13 articles.
1. Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation
2. Effects of passivating ionic films on the photoluminescence properties of GaAs
3. Electronic passivation of GaAs surfaces through the formation of arsenic—sulfur bonds
4. A Model to Explain the Effective Passivation of the GaAs Surface by (NH4)2SxTreatment
5. Surface Core-Level Binding-Energy Shifts for GaAs(110) and GaSb(110)
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