Modulating the Interface Chemistry and Electrical Properties of Sputtering-Driven HfYO/GaAs Gate Stacks by ALD Pulse Cycles and Thermal Treatment-Reference-Cited by-同舟云学术

Modulating the Interface Chemistry and Electrical Properties of Sputtering-Driven HfYO/GaAs Gate Stacks by ALD Pulse Cycles and Thermal Treatment

Author:

Liang Shuang¹,He Gang¹²^ORCID,Wang Die¹,Hao Lin¹,Zhang Miao¹,Cui Jingbiao³^ORCID

Affiliation:

1. School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University, Hefei 230039, P. R. China

2. Institute of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China

3. Department of Physics and Materials Science, The University of Memphis, Memphis, Tennessee 38152, United States

Funder

National Natural Science Foundation of China

Institute of Physical Science and Information Technology, Anhui University

Publisher

American Chemical Society (ACS)

Subject

General Chemical Engineering,General Chemistry

Link

Reference42 articles.

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献