Room-temperature Ohmic contact on n-type GaN with surface treatment using Cl2 inductively coupled plasma
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1360784
Reference9 articles.
1. Low resistance ohmic contacts on wide band‐gap GaN
2. Very low resistance multilayer Ohmic contact to n‐GaN
3. Microstructure of Ti/Al and Ti/Al/Ni/Au Ohmic contacts for n‐GaN
4. Low resistance Pd/Au ohmic contacts to p-type GaN using surface treatment
5. The effects of reactive ion etching-induced damage on the characteristics of ohmic contacts to n-Type GaN
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3. Fabrication and repair of GaN nanorods by plasma etching with self-assembled nickel nanomasks;The European Physical Journal Applied Physics;2021-03
4. A Study on the Optimized Ohmic Contact Process of AlGaN/GaN-Si MIS-HEMTs;IEEE Access;2021
5. Effect of surface stoichiometry on the non-alloyed ohmic contact to N-face n-GaN;Solid-State Electronics;2020-09
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