Low-Resistance and Low-Thermal-Budget Ohmic Contact by Introducing Periodic Microstructures for AlGaN/AlN/GaN HEMTs-Reference-Cited by-同舟云学术

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Low-Resistance and Low-Thermal-Budget Ohmic Contact by Introducing Periodic Microstructures for AlGaN/AlN/GaN HEMTs

Published:2022-06 Issue:6 Volume:69 Page:3073-3078
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Kumazaki Yusuke¹^ORCID,Ozaki Shiro¹^ORCID,Okamoto Naoya¹^ORCID,Hara Naoki¹,Ohki Toshihiro¹^ORCID

Affiliation:

1. Fujitsu Limited, Atsugi, Kanagawa, Japan

Funder

“The research and development project for the expansion of radio spectrum resources

Ministry of Internal Affairs and Communications, Japan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9780469/09768102.pdf?arnumber=9768102

Reference30 articles.

1. Low thermal budget Hf/Al/Ta ohmic contacts for InAlN/GaN-on-Si HEMTs with enhanced breakdown voltage

2. AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy

3. AlGaN/GaN Power HEMTs Using Surface-Charge-Controlled Structure　with Recessed Ohmic Technique

4. 31 GHz power characteristics of GaN HEMTs with slightly etched AlGaN layer at ohmic contact

5. Enhancement of Drain Current by an AlN Spacer Layer Insertion in AlGaN/GaN High-Electron-Mobility Transistors with Si-Ion-Implanted Source/Drain Contacts

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-power and efficiency W-band InAlGaN/AlN/GaN high-electron-mobility transistors for future high-capacity wireless communications;Applied Physics Express;2024-08-01

2. Optimizing electrical and thermal performance in AlGaN/GaN HEMT devices using dual‐metal gate technology;Heat Transfer;2024-05-27

3. Improvement of AlGaN/GaN High-Electron-Mobility Transistor Radio Frequency Performance Using Ohmic Etching Patterns for Ka-Band Applications;Micromachines;2023-12-30

4. Crack-Free High-Composition (>35%) Thick-Barrier (>30 nm) AlGaN/AlN/GaN High-Electron-Mobility Transistor on Sapphire with Low Sheet Resistance (<250 Ω/□);Crystals;2023-09-30

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