Effect of surface stoichiometry on the non-alloyed ohmic contact to N-face n-GaN-Reference-Cited by-同舟云学术

Effect of surface stoichiometry on the non-alloyed ohmic contact to N-face n-GaN

Published:2020-09 Issue: Volume:171 Page:107863
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Zhou Rui,Feng Meixin,Wang Jin,Zhong Yaozong,Sun Qian,Liu Jianxun,Huang Yingnan,Zhou Yu,Gao Hongwei,Ikeda Masao,Li Zhiyun,Zhao Yanfei,Liu Tong,Yang Hui

Funder

Key-Area R&D Program of Guangdong Province

National Natural Science Foundation of China

Jiangsu Province

Natural Science Foundation of Jiangsu Province

Natural Science Foundation of Jiangxi Province

China Postdoctoral Science Foundation

Suzhou Institute of Nano-Tech and Nano-Bionics

CAS

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference32 articles.

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3. High-brightness InGaN blue, green and yellow light-emitting-diodes with quantum-well structures;Nakamura;Jpn J Appl Phys,1995

4. Vertical power p-n diodes based on bulk GaN;Kizilyalli;IEEE Trans Electron Devices,2015

5. Lateral and vertical transistors using the AlGaN/GaN Heterostructure;Chowdhury;IEEE Trans Electron Devices,2013

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